On-resistance and gate charge — sizing the gate drive
A 10 V drive rail is specified for the lowest Rds(on); driving with 5 V logic leaves significant margin on the table because the threshold voltage max is 4.5 V at 250 µA.
STP80N6F6 N-Channel MOSFET, 60V 110A, TO-220, AEC-Q101
MPNSTP80N6F6
Obsolete
STMicroelectronics STP80N6F6, N-Channel MOSFET, Automotive AEC-Q101 DeepGATE STripFET VI series, 60V Vdss, 110A Id, 5.8mOhm Rds(on) at 10V, TO-220-3, Through Hole.
$2.6000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 110A (Tc) |
| Power dissipation | 120W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 5.8mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 122 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7480 pF @ 25 V |
Product details
Frequently asked questions
What is the Vgs threshold of the STP80N6F6?
The maximum gate threshold voltage is 4.5 V at 250 µA drain current.