800 V N-channel MOSFET for offline power conversion
Temperature range and thermal design
Without adequate heatsinking, the junction temperature will exceed the 150°C limit well below the 6.5 A continuous current rating in free air.
Gate drive requirements
The ±30 V maximum gate-source voltage gives some margin for ringing on the gate node, but a gate resistor is still advisable to damp oscillations in a hard-switched converter layout.
Sourcing an obsolete part
No direct pin-compatible successor is recorded in the official lifecycle data, so the replacement path typically goes through a parametric cross — a MOSFET with equal or higher Vdss (800 V minimum), similar or lower Rds(on), and compatible gate charge in a TO-220 package. The MDmesh™ series has been superseded by newer generations like MDmesh™ V and MDmesh™ K5, but pin compatibility and gate-drive thresholds vary.