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STMicroelectronics STP7NM60N — Discrete Semiconductors

STP7NM60N MOSFET, 600 V, 5 A, N-Channel MDmesh II, TO-220

MPNSTP7NM60N
Obsolete

STMicroelectronics MDmesh™ II, STP7NM60N, N-Channel MOSFET, 600 V Vdss, 5 A Id, 900 mOhm Rds(on), 14 nC Qg, TO-220-3, Through Hole.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP7NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation45W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs900mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds363 pF @ 50 V

Product details

With a maximum gate charge of 14 nC at 10 V, the STP7NM60N requires relatively little drive current to switch at moderate frequencies. A 100 kHz switching rate draws about 1.4 mA from the gate driver, keeping the driver's power dissipation low and allowing simpler bootstrap circuits in half-bridge topologies.

Frequently asked questions

Is the STP7NM60N obsolete?

Yes, the STP7NM60N carries an obsolete lifecycle status. No official replacement or successor has been published by STMicroelectronics.