STP7NK80Z

STMicroelectronics

STMicroelectronics STP7NK80Z, N-Channel MOSFET, SuperMESH™ series, 800V Vdss, 5.2A Id, 1.8 Ohm Rds(on), TO-220-3, -55 to 150°C.

STMicroelectronics STP7NK80Z
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[IN STOCK] In Stock: 165 pcs
$2.15/ pc

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Technical specifications

STP7NK80Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.2A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs1.8Ohm @ 2.6A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1138 pF @ 25 V

Technical details

Gate charge of 56 nC at 10 V is moderate; a standard gate-drive IC or a driver transformer can drive it without excessive switching loss at frequencies up to 100 kHz or so.

That extra headroom matters when the part sits near a hot transformer or in a sealed outdoor PSU where ambient can push 85 °C and the junction sees another 40 °C rise from dissipation.

ST lists the STP7NK80Z as Active. For a BOM line, this part carries no LTB risk and is suitable for qualification into new designs. The base product number STP7NK80 covers the family; the Z suffix denotes the SuperMESH generation.

STP7NK80Z
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