STMicroelectronics PowerMESH™ series, N-Channel MOSFET, 600 V drain-to-source voltage, 7.2 A continuous drain at 25°C, 1.2 Ohm on-resistance at 10 V gate drive, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | PowerMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7.2A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 3.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1625 pF @ 25 V |
Availability is intermittent and depends on inventory held by distributors and excess-stock holders.
600 V drain-to-source voltage (Vdss). 45 nC typical gate charge at 10 V. 1625 pF input capacitance at 25 V drain-source.
The tab is electrically connected to the drain.
The STP7NB60 is obsolete and sourced through independent distribution. Submit an RFQ through this page to receive a quote.
STMicroelectronics does not list an official direct replacement for the STP7NB60. A suitable replacement would be a modern 600 V N-channel MOSFET in a TO-220 package with similar or better Rds(on) and gate charge characteristics, such as devices from the STP6N series or equivalent from other manufacturers. Evaluate the specific circuit requirements — gate drive voltage, switching frequency, and thermal budget — before substituting.