950 V N-Channel MOSFET for high-voltage switched-mode supplies
The STP7N95K3 is an N-channel 950 V power MOSFET from ST's SuperMESH3™ series, rated for 7.2 A continuous drain current at 25°C case temperature. That 950 V drain-to-source breakdown voltage puts it squarely in the class of devices used in the primary side of off-line flyback converters and two-switch forward topologies where the reflected voltage plus leakage spike can exceed 800 V on a 385 V DC bus. The 1.35 Ohm maximum on-resistance is specified at 3.6 A drain current with a 10 V gate drive — the same gate voltage used for the 34 nC total gate charge figure. That gate charge number tells you the driver current needed at the switching frequency: at 100 kHz, the average gate-drive current is 3.4 mA, well within the capability of a standard PWM controller's totem-pole output.
Switching losses and thermal budget at the bench
The 1031 pF input capacitance at 100 V Vds is the key number for estimating turn-on delay. With a 10 Ω gate resistor and 10 V drive, the time constant is about 10 ns — fast enough for 100 kHz hard-switching but worth checking against the controller's minimum dead-time if you are pushing toward 200 kHz. Maximum power dissipation is 150 W at case temperature 25°C, derated to zero at 150°C junction. The TO-220 package with the exposed metal tab gives a junction-to-case thermal resistance around 0.83°C/W typical — bolt it to a heatsink with thermal compound and the tab is the primary heat path. The operating junction range of -55°C to 150°C covers industrial and automotive under-hood ambient without margin concerns.
Active production and compliance documentation
The STP7N95K3 carries an active lifecycle status from STMicroelectronics, with ROHS3 compliance confirmed. The base product number is STP7N95, and the part ships in tubes (the standard through-hole packaging for TO-220). The 5 V maximum gate threshold at 100 µA drain current means a standard 10 V gate drive is well above the threshold, ensuring full enhancement across the operating temperature range.
Sourcing and availability for the BOM line
The STP7N95K3 is sourced through independent distribution channels, quoted to order against your BOM quantity. Availability and current pricing are confirmed at the time of RFQ — no stock-holding claim, but the part is actively produced and the supply chain is established. For a BOM that was specified around the STP7N80K5 (800 V, 6 A, 1.2 Ohm) or STP7N90K5 (900 V, 7 A, 810 mOhm), the STP7N95K3 offers a higher voltage rating and comparable current capability in the same TO-220 footprint. The 950 V rating provides additional margin in applications where the reflected voltage plus leakage spike approaches 800 V, without changing the PCB layout or heatsink mounting.