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STMicroelectronics STP7N90K5 — Discrete Semiconductors

STP7N90K5 MOSFET N-CH 900V 7A TO-220, MDmesh K5

MPNSTP7N90K5
Active

STMicroelectronics STP7N90K5, MDmesh™ K5 series, N-Channel MOSFET, 900 Vdss, 7 A continuous drain, 810 mOhm Rds(on) at 10 V, 17.7 nC gate charge, TO-220-3 through-hole, -55 to 150 °C.

$2.6900Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP7N90K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs810mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs17.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds425 pF @ 10 V

Product details

900 V N-channel in a TO-220 — where it fits

The TO-220-3 through-hole package keeps the thermal path to a heatsink straightforward — the tab is the drain, and the 110 W power dissipation ceiling assumes a properly sized heatsink and good case-to-sink interface.

Total gate charge is 17.7 nC at Vgs = 10 V, and input capacitance Ciss is 425 pF at Vds = 10 V. For a 100 kHz hard-switched converter, the gate drive power is roughly Qg × Vgs × fsw = 17.7 nC × 10 V × 100 kHz ≈ 18 mW — well within a standard gate-driver IC's capability. The low Qg relative to the 900 V class means the Miller plateau duration is short, which helps keep switching losses in check during turn-on and turn-off transitions.

Thermal and mounting considerations

The TO-220 package requires a heatsink for any continuous load above a few watts — the 110 W maximum dissipation at Tc = 25 °C drops to roughly 70 W at 100 °C case temperature, using the datasheet derating curve. Through-hole mounting with a screw or clip to the heatsink tab is standard; a thermal pad or grease between the tab and sink cuts the junction-to-case thermal resistance.

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of STP7N90K5?

Maximum on-resistance is 810 mOhm at 4 A drain current and 10 V gate drive. This is the figure to use for worst-case conduction loss calculations at 25 °C junction temperature; actual Rds(on) rises with temperature per the normalised curve in the datasheet.

Is STP7N90K5 suitable for high voltage applications?

Yes. The 900 V drain-source breakdown voltage makes it suitable for offline power supplies, PFC stages, and flyback converters operating from rectified 230 VAC mains, with margin for switching transients.