600 V, 5 A N-channel MOSFET in TO-220
The STP7N60M2 is a 600 V drain-source, 5 A continuous-drain N-channel power MOSFET from STMicroelectronics' MDmesh™ II Plus series, built on a striped layout process that reduces on-resistance per unit area while maintaining fast body-diode recovery for bridge topologies. The TO-220-3 through-hole package (supplier device package TO-220) allows direct mounting to a heatsink with a single screw, making thermal management straightforward in open-frame or enclosed power supplies.
Conduction and switching parametrics
Input capacitance is 271 pF at 100 V drain-source bias — this low capacitance, combined with the MDmesh II Plus technology's fast switching speed, means the device can achieve transition times under 20 ns in a properly laid-out half-bridge, reducing cross-conduction losses. Maximum power dissipation is 60 W at case temperature, derated linearly above 25°C — a heatsink with thermal resistance below 2°C/W is needed to sustain 5 A continuous conduction at high ambient temperatures.
Temperature range and compliance
Base product number STP7N60 identifies the die and package variant; the M2 suffix denotes the MDmesh II Plus generation, which offers lower gate charge and faster switching than the earlier MDmesh M1 generation in the same voltage class.