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STMicroelectronics STP7N52K3 — Discrete Semiconductors

STP7N52K3 N-Channel MOSFET, 525 V, 6 A, TO-220-3

MPNSTP7N52K3
Obsolete

STMicroelectronics SuperMESH3™ N-channel MOSFET, STP7N52K3, 525 V drain-source, 6 A continuous drain, 980 mΩ Rds(on) at 10 V, TO-220-3 through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP7N52K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage525 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation90W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs980mOhm @ 3.1A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds737 pF @ 100 V

Product details

525 V drain-source — the application envelope

Its 525 V drain-to-source breakdown voltage places it squarely in the offline power-converter space — flyback and forward converters, PFC stages, and auxiliary power supplies where the DC bus sits at 380 V or so. The TO-220-3 through-hole package makes it a straightforward fit for a bolted-down TO-220 heatsink on a single-sided PCB.

STMicroelectronics lists the STP7N52K3 as obsolete.

A 10 V gate-drive rail is expected — the Rds(on) is specified at that voltage, and the threshold voltage max is 4.5 V at 50 µA. The ±30 V maximum gate-source rating leaves plenty of margin for ringing on a well-laid-out gate loop.

Frequently asked questions

Is STP7N52K3 obsolete?

Yes, STMicroelectronics lists the STP7N52K3 as obsolete. No official replacement order code has been published. For existing designs, sourcing is through surplus and last-time-buy channels.

What is the Vds rating of STP7N52K3?

The drain-to-source voltage rating is 525 V, making it suitable for 380 V DC bus applications in offline power converters.