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STMicroelectronics STP7N52DK3 — Discrete Semiconductors

STMicroelectronics STP7N52DK3

MPNSTP7N52DK3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP7N52DK3 specifications
ParameterValue
SeriesSuperFREDmesh3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage525 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation90W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.15Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds870 pF @ 50 V