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STMicroelectronics STP77N6F6 — Discrete Semiconductors

STP77N6F6 N-Channel MOSFET, 60V 77A, TO-220

MPNSTP77N6F6
Obsolete

STMicroelectronics DeepGATE™, STripFET™ VI, N-Channel MOSFET, 60 V Vdss, 77 A Id, 7 mOhm Rds(on) at 10 V, TO-220-3, -55°C to 175°C.

$1.5200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP77N6F6 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C77A (Tc)
Power dissipation80W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 38.5A, 10V
Gate charge (Qg) (Max) @ vgs76 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5300 pF @ 25 V

Product details

Obsolete — sourcing the STP77N6F6 now

For a BOM line already qualified to this TO-220 footprint, the practical path is surplus or broker-channel procurement. The wide -55°C to 175°C temperature rating and the 60 V / 77 A headroom mean it still fits designs that were originally spec'd around it, as long as the procurement channel accounts for the obsolescence risk.

The 80 W power dissipation ceiling at case temperature means the TO-220 tab needs a heatsink or forced airflow for continuous operation near the 77 A rating; a 38.5 A test condition on the Rds(on) is a more realistic continuous-current design point without aggressive cooling.

Frequently asked questions

What is the direct replacement for STP77N6F6?

A pin-compatible replacement from the same STripFET VI or DeepGATE family would share the TO-220 footprint and 60 V rating, but without an official cross-reference, the safest path is to qualify a candidate against your switching and thermal requirements. We can help source the original part through surplus channels if the BOM is locked.