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STMicroelectronics STP75NS04Z — Discrete Semiconductors

STP75NS04Z N-Channel MOSFET, 33 V, 80 A, TO-220

MPNSTP75NS04Z
Obsolete

STMicroelectronics STP75NS04Z, N-Channel MOSFET, MESH OVERLAY™ III, 33 V Vdss, 80 A Id, 11 mOhm Rds(on) @ 40 A / 10 V, 110 W, TO-220-3, -55 to 175 °C.

$2.0400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP75NS04Z specifications
ParameterValue
SeriesMESH OVERLAY™ III
FET typeN-Channel
MountingThrough Hole
Drain to source voltage33 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
VgsClamped
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1860 pF @ 25 V

Product details

At 40 A, dissipation in the channel runs about 17.6 W, which combined with the 110 W package limit (Tc) tells you this part needs a decent heatsink or forced air above 40 A continuous.

STMicroelectronics lists the STP75NS04Z as obsolete.

Frequently asked questions

Where can I buy STP75NS04Z?

STP75NS04Z is obsolete from the manufacturer, so standard franchised distribution does not carry it.

What is the replacement for STP75NS04Z?

No official replacement is listed by STMicroelectronics. For a new design, evaluate ST's current 30–40 V N-channel TO-220 MOSFETs with Rds(on) near 11 mOhm and gate charge around 50 nC. For a drop-in on an existing board, the surplus channel is the only option — we can source the original part against an RFQ.