At 40 A, dissipation in the channel runs about 17.6 W, which combined with the 110 W package limit (Tc) tells you this part needs a decent heatsink or forced air above 40 A continuous.
STMicroelectronics lists the STP75NS04Z as obsolete.

STMicroelectronics STP75NS04Z, N-Channel MOSFET, MESH OVERLAY™ III, 33 V Vdss, 80 A Id, 11 mOhm Rds(on) @ 40 A / 10 V, 110 W, TO-220-3, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | MESH OVERLAY™ III |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 33 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | Clamped |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 50 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1860 pF @ 25 V |
At 40 A, dissipation in the channel runs about 17.6 W, which combined with the 110 W package limit (Tc) tells you this part needs a decent heatsink or forced air above 40 A continuous.
STMicroelectronics lists the STP75NS04Z as obsolete.
STP75NS04Z is obsolete from the manufacturer, so standard franchised distribution does not carry it.
No official replacement is listed by STMicroelectronics. For a new design, evaluate ST's current 30–40 V N-channel TO-220 MOSFETs with Rds(on) near 11 mOhm and gate charge around 50 nC. For a drop-in on an existing board, the surplus channel is the only option — we can source the original part against an RFQ.