75 V, 78 A, 11 mΩ — the power-switch specs that matter
The STP75N75F4 is an STMicroelectronics N-channel power MOSFET from the DeepGATE™ and STripFET™ series, built for high-current switching in the 12 V to 48 V range. Its 75 V drain-to-source breakdown (Vdss) gives headroom on a 48 V bus, and the 78 A continuous drain rating at 25 °C case temperature handles motor-drive inrush and power-supply primary-side loads without derating anxiety. Gate charge is 76 nC at 10 V, a moderate figure for a 78 A device. That means a standard gate-driver IC or a simple totem-pole pair can switch it at tens of kHz without excessive drive losses. The 4 V gate threshold maximum at 250 µA drain current confirms this is a 10 V-logic device — do not expect full enhancement at 5 V gate drive; plan for a 10 V rail or a dedicated bootstrap supply.
If this part is on your active BOM, you are already sourcing from the surplus and independent-distribution channel — and that is where we come in. No stock promises on the page; the RFQ gets you the real picture.
Through-hole TO-220 — mounting and thermal reality
The STP75N75F4 comes in a standard TO-220-3 through-hole package, also listed as supplier device package TO-220. That means a 0.100-inch pitch, a metal tab for heatsink mounting, and a screw hole for a TO-220 clip or bolt-down heatsink. The 150 W power dissipation is rated at case temperature (Tc), not ambient — you need a heatsink to get anywhere near that number. Without one, junction-to-ambient thermal resistance for TO-220 typically runs 60–80 °C/W, so at 3 W dissipation the junction hits 180–240 °C above ambient. Plan the thermal interface: a greased mica pad or silicone pad, a clip or screw, and forced air if the dissipation is continuous.
Temperature range and what it buys you
That extra margin matters if the part sits near a hot heatsink in a sealed enclosure or sees repetitive avalanche pulses that spike the junction above 150 °C. The storage temperature range is the same, so no special handling beyond standard ESD precautions.