STMicroelectronics STripFET™, STP75N20, N-Channel MOSFET, 200V Vdss, 75A Id, 34mOhm Rds(on) @ 37A, 10V, 190W, TO-220-3, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 75A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 34mOhm @ 37A, 10V |
| Gate charge (Qg) (Max) @ vgs | 84 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3260 pF @ 25 V |
The 200 V Vdss provides adequate headroom for 48 V to 120 V bus voltages in telecom and industrial systems, while the 75 A continuous current rating supports high-power loads when properly heatsinked.
The STP80N20 is a common cross-shop candidate; see the FAQ for a brief comparison.
The STP75N20 is obsolete and no longer in factory production.
No official replacement is listed by STMicroelectronics. For a parametric match, look for an N-channel MOSFET with 200 V Vdss, 75 A or higher Id, and Rds(on) near 34 mOhm in a TO-220 package. The STP80N20 is a commonly compared alternative — it offers a higher 80 A continuous current rating at the same 200 V, but verify pin compatibility and gate drive requirements for your design.
The maximum Rds(on) is 34 mOhm at a drain current of 37 A and a gate-to-source voltage of 10 V. This on-resistance is specified at 25°C junction temperature.