33 V, 80 A N-channel power MOSFET in TO-220
It is designed for high-current switching applications such as DC-DC converters, motor drives, and power supply rails where low on-resistance and fast switching are required.
With an Rds(on) of 11 mOhm at 10 V gate drive, the STP70NS04ZC keeps conduction losses low at high current — at 40 A, dissipation in the channel is under 18 W, which the 180 W package power rating can handle with adequate heatsinking.
Package and mounting — TO-220 through-hole
The tab is the drain, and the metal back provides a low thermal resistance path to a heatsink — a thermal pad or mica insulator with thermal compound is typical for dissipating the 180 W maximum. The through-hole leads suit point-to-point wiring or PCB mounting with a heatsink clip. The ±20 V maximum gate-source voltage gives headroom for 10 V or 12 V gate drive rails, but the drive voltage for minimum Rds(on) is specified at 10 V — driving with 5 V will roughly double the on-resistance, so a 10 V rail is recommended for full rated performance.