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STMicroelectronics STP6NM60N — Discrete Semiconductors

STP6NM60N N-Channel MOSFET, 600 V, 4.6 A, TO-220

MPNSTP6NM60N
Obsolete

STMicroelectronics STP6NM60N, MDmesh™ II series, N-Channel MOSFET, 600 V Vdss, 4.6 A Id, 920 mOhm Rds(on), TO-220-3, Through Hole.

STMicroelectronics STP6NM60N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP6NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.6A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs920mOhm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds420 pF @ 50 V

Product details

600 V, 4.6 A N-channel MOSFET — MDmesh II generation

The STP6NM60N is a 600 V, 4.6 A N-channel power MOSFET from STMicroelectronics' MDmesh™ II series, built on a metal-oxide semiconductor process. The 13 nC typical gate charge (at 10 V) and 420 pF input capacitance (at 50 V) make it suited for medium-speed hard-switching applications like flyback converters, PFC stages, and auxiliary power supplies in industrial and consumer SMPS designs.

Key ratings for the BOM decision

The 600 V drain-source voltage rating sets the operating voltage ceiling for offline flyback or PFC stages — derate for AC line transients.

Frequently asked questions

What is the replacement for STP6NM60N?

For a pin-compatible alternative, look for other 600 V N-channel MOSFETs in the TO-220 package from ST's MDmesh series or from competitors, verifying Rds(on) and gate charge against your design requirements.