STP6NK90ZFP

STMicroelectronics · SuperMESH™ Series

STMicroelectronics STP6NK90ZFP, N-Channel MOSFET, SuperMESH series, 900 V Vdss, 5.8 A Id, 2 Ohm Rds(on) at 10 V, TO-220-3 Full Pack, -55 to 150 °C.

STMicroelectronics STP6NK90ZFP
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Technical specifications

STP6NK90ZFP specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.8A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs2Ohm @ 2.9A, 10V
Gate charge (Qg) (Max) @ vgs60.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1350 pF @ 25 V

Technical details

At that operating point conduction loss is I²R = 16.8 W, which sits inside the 30 W package power limit but leaves only 13.2 W headroom for switching losses. The 60.5 nC total gate charge at 10 V means the gate driver needs to source about 60 nC per switching cycle; at 100 kHz that's 6 mA average drive current, well within a standard MOSFET driver's capability.

Thermal and package — rework and mounting notes

The TO-220FP full-pack body has no exposed metal tab — the plastic encapsulant is the thermal interface. Rated power dissipation is 30 W at case temperature, and the operating junction range is -55 to 150 °C. Through-hole mounting with the package screw hole lets you torque it to a heatsink with a standard M3 screw. The isolated package means no mica or sil-pad, which cuts assembly time and eliminates one failure point under thermal cycling.

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