900 V N-channel MOSFET for high-voltage switching
The STP6NK90Z is a 900 V N-channel MOSFET in a TO-220-3 through-hole package.
The input capacitance of 1350 pF at 25 V drain-source is typical for a 900 V device of this current class; the gate-drive circuit should be sized to deliver the peak current needed for the target switching frequency without excessive crossover loss.
Temperature range and thermal design
The maximum power dissipation is 140 W at case temperature Tc.
For BOM lines that require a second-source option, ST's own SuperMESH family includes several 900 V N-channel devices in TO-220 with similar Rds(on) and current ratings — the base product number STP6NK90 covers the series, and the Z suffix denotes the specific SuperMESH generation.