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STMicroelectronics STP6NK70Z — Discrete Semiconductors

STP6NK70Z N-Channel MOSFET, 700 V, 5 A, SuperMESH™, TO-220

MPNSTP6NK70Z
Obsolete

STMicroelectronics SuperMESH™ series, STP6NK70Z, N-Channel MOSFET, 700 V Vdss, 5 A continuous drain, 1.8 Ohm Rds(on) at 10 V, 47 nC gate charge, TO-220-3 through-hole package.

$1.8700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP6NK70Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs1.8Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs47 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds930 pF @ 25 V

Product details

700 V, 5 A N-channel — the SuperMESH™ power switch

It is rated for a drain-source voltage of 700 V and a continuous drain current of 5 A at 25 °C case temperature, making it suitable for flyback converters, PFC stages, and offline power supplies in the 100–200 W range. The device is packaged in a through-hole TO-220-3, a standard footprint for heatsink-mounting in industrial and consumer power electronics.

1.8 Ohm Rds(on) — conduction loss and gate drive

The recommended drive voltage for achieving minimum Rds(on) is 10 V, with a maximum gate-source rating of ±30 V.

Obsolete — sourcing the STP6NK70Z today

Engineers evaluating a replacement should look for a 700 V, 5 A N-channel MOSFET in a TO-220 package with a similar Rds(on) and gate charge profile; the SuperMESH™ series has been superseded by newer generations such as MDmesh™, but pin-compatibility and parametric matching need to be verified against the specific application.

Frequently asked questions

What is the replacement for STP6NK70Z?

No official replacement order code is listed. A functionally equivalent replacement should be a 700 V, 5 A N-channel MOSFET in a TO-220 package with a similar Rds(on) (1.8 Ohm max at 10 V) and gate charge (47 nC). Candidates from ST's newer MDmesh™ family or other vendors require individual parametric verification against the target application.