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STMicroelectronics STP6NK60Z — Discrete Semiconductors

STP6NK60Z N-Channel MOSFET, 600V 6A TO-220, NRND

MPNSTP6NK60Z
NRND

STMicroelectronics SuperMESH™ N-Channel MOSFET, 600V Vdss, 6A continuous drain, 1.2 ohm Rds(on) at 10V, TO-220-3 through-hole package, -55 to 150°C operating junction temperature.

$2.1900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP6NK60Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs1.2Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs46 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds905 pF @ 25 V

Product details

The STP6NK60Z: Through-hole TO-220-3 package.

Key ratings at a glance

Gate charge totals 46 nC at 10 V — moderate for a 600 V device, meaning the gate driver does not need to be oversized.

Mounting and thermal handling

The TO-220 package is through-hole, so it gets soldered into plated through-holes on the board and typically bolted to a heatsink with a screw and insulating washer. Maximum power dissipation is 110 W at case temperature — that figure assumes an infinite heatsink; real-world dissipation depends on the thermal interface and airflow. The tab is the drain, so the heatsink must be electrically isolated or the system ground must tolerate drain potential.

Frequently asked questions

Is STP6NK60Z obsolete or NRND?

It is still available for existing production but not recommended for new designs. No official replacement order code is listed.