STP6N95K5

STMicroelectronics · SuperMESH5™ Series

STMicroelectronics SuperMESH5™ STP6N95K5, N-Channel MOSFET, 950 V Vdss, 9 A Id, 1.25 Ohm Rds(on) @ 3 A, 10 V, 13 nC Qg, TO-220-3, -55°C to 150°C.

STMicroelectronics STP6N95K5
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Technical specifications

STP6N95K5 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation90W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.25Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 100 V

Technical details

950 V N-channel in a TO-220 — the high-voltage workhorse

The TO-220-3 through-hole package suits it for board-level mounting on aluminium-backed PCBs or heatsinks in industrial and telecom power supplies.

With a maximum Rds(on) of 1.25 Ohm at 3 A, 10 V, the STP6N95K5 is not the lowest on-resistance in the 950 V class, but the 13 nC typical total gate charge at 10 V is notably low. This combination favours designs where switching losses dominate — flyback converters running at 65-100 kHz, for example — because the driver can charge and discharge the gate quickly without a large current pulse. The input capacitance is 450 pF at 100 V drain bias, which keeps the Miller plateau short and reduces cross-conduction during hard-switching transitions.

The ±30 V maximum gate-source voltage gives some headroom for gate-drive overshoot in noisy power stages.

For new designs, the part is available through franchised and independent distribution; the BOM position is stable for the foreseeable future.

STP6N95K5
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