STP6N80K5

STMicroelectronics

STMicroelectronics SuperMESH5™ N-Channel MOSFET, 800 V Vdss, 4.5 A continuous drain, 1.6 Ohm Rds(on) at 10 V, 7.5 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C junction temperature.

STMicroelectronics STP6N80K5
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[IN STOCK] In Stock: 142 pcs
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Technical specifications

STP6N80K5 specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.6Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs7.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds255 pF @ 100 V

Technical details

800 V N-channel MOSFET for offline power conversion

The STP6N80K5 is an N-channel MOSFET in a through-hole TO-220-3 package, rated for 800 V drain-source voltage and 4.5 A continuous drain current.

Switching performance and gate drive

Gate charge is 7.5 nC at 10 V. Input capacitance is 255 pF at 100 V drain-source.

Thermal and environmental range

The wide temperature margin also covers cold-start conditions in outdoor telecom or automotive auxiliary supplies.

No official pin-compatible alternate is recorded for the SuperMESH5™ 800 V family.

STP6N80K5
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