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STMicroelectronics STP6N65M2 — Discrete Semiconductors

STP6N65M2 N-Channel MOSFET, 650V 4A TO-220, Obsolete

MPNSTP6N65M2
Obsolete

STMicroelectronics STP6N65M2, MDmesh™ N-Channel MOSFET, 650 V drain-source, 4 A continuous drain, 1.35 Ohm Rds(on) at 10 V, 9.8 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C junction temperature.

$1.2100Ref. price · indicative, final on quote
STMicroelectronics STP6N65M2 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP6N65M2 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.35Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs9.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds226 pF @ 100 V

Product details

Its 650 V drain-source voltage rating and 4 A continuous drain current suit it for flyback and forward-converter primary-side switches, PFC stages, and auxiliary power rails where through-hole mounting and a TO-220 package are acceptable.

Obsolete — sourcing reality for sustainment programs

The 650 V drain-source voltage gives headroom for universal-input AC-DC converters (up to 400 V DC bus) plus derating for leakage inductance spikes. The 9.8 nC gate charge keeps the gate-drive energy low, which helps in high-frequency designs. The 60 W maximum power dissipation assumes a properly heatsinked TO-220 package.

Package and mounting — through-hole TO-220

The through-hole leads suit wave-soldering or hand-soldering into a PCB.

Frequently asked questions

What is the replacement for STP6N65M2?

Any replacement must be evaluated on form-fit-function criteria — same 650 V drain-source, 4 A drain current, N-channel, TO-220 package.