STMicroelectronics SuperMESH3 N-Channel MOSFET, STP6N62K3, 620 V drain-source, 5.5 A continuous drain, 1.2 Ohm Rds(on) at 10 V, 34 nC gate charge, TO-220-3 through-hole package, 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 620 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Tc) |
| Power dissipation | 90W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 2.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 875 pF @ 50 V |
The STP6N62K3: It comes in a TO-220-3 through-hole package, which means you can swap it on site with a soldering iron and basic ESD kit — no hot-air station, no lab bench.
At 2.8 A drain current, conduction loss runs about 9.4 W — well within the 90 W package power dissipation limit, but the TO-220 tab needs a decent heatsink or forced air if you push the duty cycle.
That's the spec to use for worst-case conduction-loss calculations in the power stage.