STMicroelectronics SuperMESH3™ N-channel MOSFET, STP6N52K3, 525 V drain-source, 5 A continuous drain, 1.2 Ohm Rds(on) at 10 V, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 525 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 26 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 670 pF @ 50 V |
The STP6N52K3: Total gate charge is 26 nC at 10 V. Input capacitance is 670 pF at 50 V drain-source.
The STP6N52K3 carries an Obsolete product status. Buyers should verify stock position and lead time before committing the BOM line.
Direct drop-in alternative is critical for maintaining existing designs without redesign.
Determines immediate need for alternate sourcing or redesign before stock runs out.
Quickly locate remaining stock from distributors or brokers to avoid production delays.
Essential for validating electrical characteristics and ensuring compatibility with the application.
Identifies other MOSFETs with similar specs for multi-sourcing or design flexibility.
Ensures correct PCB layout and avoids assembly errors during replacement or repair.