STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, 1200 V Vdss, 6 A continuous drain, 2.4 Ohm Rds(on) at 2.5 A, 10 V, TO-220-3 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 2.4Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1050 pF @ 100 V |
The STP6N120K3: Through-hole TO-220-3 package, N-Channel, 1200 V Vdss, 6 A continuous drain, 2.4 Ohm Rds(on) at 2.5 A, 10 V.
The STP6N120K3 is listed as obsolete.
The TO-220 package is not hermetic, so conformal coating is advisable in humid or condensing environments.
Submit a request for quote (RFQ) and we will confirm current availability and pricing at quote time.
STMicroelectronics has not published an official direct replacement for the STP6N120K3. For a new design, look at current-production 1200 V N-channel MOSFETs in a TO-220 package with similar Rds(on) and gate charge from ST's later series or from competitors such as Infineon or IXYS. For an existing BOM, we can help source the original part through the surplus channel.