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STMicroelectronics STP65N045M9 — Discrete Semiconductors

STP65N045M9 N-Channel MOSFET, 650 V, 55 A, TO-220

MPNSTP65N045M9
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STMicroelectronics STP65N045M9 N-Channel MOSFET, 650 V drain-source voltage, 55 A continuous drain current, 45 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 150°C operating junction temperature.

$11.8700Ref. price · indicative, final on quote
STMicroelectronics STP65N045M9 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP65N045M9 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C55A (Tc)
Power dissipation245W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.2V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 28A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4610 pF @ 400 V

Product details

650 V, 45 mOhm — the numbers that decide the BOM

The STP65N045M9: It is built on MDmesh M9 technology, a planar structure that keeps the on-resistance low while handling 650 V drain-source. This combination targets high-voltage switching applications — power-factor-correction stages, flyback and LLC resonant converters, and motor drives where the DC bus sits at 400 V or below.

The 650 V Vdss provides margin above a typical 400 V PFC rail. Gate charge of 80 nC at 10 V is moderate. The 4610 pF input capacitance at 400 V Vds sets the miller plateau width.

Through-hole TO-220-3. The tab is the drain. No AEC-Q grade is stated, so treat it as an industrial-grade device unless you verify otherwise.

Frequently asked questions

Can I use STP65N045M9 for a 48 V application?

Yes. The 650 V Vdss rating far exceeds a 48 V bus, so the part is overkill for voltage but usable. The 45 mOhm Rds(on) is low enough that conduction losses at 10 A are under 5 W. The main penalty is the larger TO-220 package compared to a 60 V or 100 V logic-level MOSFET that would switch faster with lower gate charge.