STMicroelectronics STP62NS04Z N-channel Power MOSFET, MESH OVERLAY series, 33 V drain-source voltage, 62 A continuous drain current, 15 mΩ on-resistance at 10 V gate drive, TO-220-3 through-hole package, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | MESH OVERLAY™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 33 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 62A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | Clamped |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 15mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 47 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1330 pF @ 25 V |
The clamped gate-source voltage simplifies drive design by preventing overvoltage on the gate. Housed in a TO-220-3 through-hole package, it suits board-level mounting with a heatsink for thermal management.
STMicroelectronics lists the STP62NS04Z as obsolete. For production or repair requirements, procurement must turn to the independent surplus and broker channel.
No official replacement part is recorded in the available documentation. A functionally similar N-channel MOSFET with comparable voltage, current, and on-resistance ratings in a TO-220 package would need to be selected based on the specific application requirements.