STMicroelectronics STripFET™ II STP60NF10, N-Channel MOSFET, 100 V Vdss, 80 A Id, 23 mOhm Rds(on) @ 40 A, 10 V, TO-220-3, through-hole.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 23mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 104 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4270 pF @ 25 V |
The STP60NF10 is an STMicroelectronics STripFET™ II N-channel power MOSFET in a through-hole TO-220-3 package. The package dissipation ceiling is 300 W.
Total gate charge is 104 nC at 10 Vgs. Input capacitance Ciss is 4270 pF at 25 V drain-source.
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