STMicroelectronics
STMicroelectronics STripFET™ II series, STP60NF06, N-Channel MOSFET, 60 V drain-source, 60 A continuous drain, 16 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 16mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 73 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1660 pF @ 25 V |
The STP60NF06: N-channel MOSFET, 60 V drain-source, 60 A continuous drain, 16 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.
At 60 A the on-resistance will rise due to self-heating, so the 16 mOhm figure is the benchmark for sizing heatsinks at the typical operating point.
STMicroelectronics lists the STP60NF06 as Active.
