The STMicroelectronics STP60NF03L is an N-channel power MOSFET built on the STripFET trench-gate process, rated for 30 V drain-source breakdown and 60 A continuous drain current in a TO-220 through-hole package. The 10 mOhm maximum Rds(on) at 30 A with 10 V gate drive keeps dissipation manageable in a single TO-220, though the 100 W power dissipation ceiling means a heatsink is expected for sustained high current.
10 mOhm Rds(on) and logic-level gate drive — the numbers that matter
The headline Rds(on) of 10 mOhm at 30 A, 10 V is the number that drives your thermal budget — at 30 A continuous, that is about 9 W conduction loss before switching losses, which the TO-220 can sink with a reasonable heatsink. The drive voltage table lists 4.5 V and 10 V as the points for minimum Rds(on), so a 5 V logic rail gets you most of the way there. Gate charge is 58 nC at 5 V, which is modest — a microcontroller pin can switch it at a few kHz directly, though for PWM above 10 kHz you will want a gate driver to sharpen the edges.