STMicroelectronics STripFET™ series, N-Channel MOSFET, TO-220-3, 60 V drain-to-source voltage, 60 A continuous drain current, 14 mOhm maximum on-resistance at 30 A, 10 V gate drive.
| Parameter | Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | 175°C(TJ) |
| Package | Tube |
| Vgs | ±15V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 70 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 4150 pF @ 25 V |
It is designed for switching applications in power supplies, motor drives, and DC-DC converters where low on-resistance and high current capability are required.
Maximum on-resistance is 14 mOhm at 30 A with 10 V gate drive. Drive voltage range is 5 V to 10 V.
Maximum gate charge is 70 nC at 5 V gate drive. Input capacitance is 4150 pF at 25 V drain-source.
STMicroelectronics lists the STP60NE06L-16 as obsolete. No last-time-buy window remains; the channel is the secondary market.
For a pin-compatible alternative, look at other 60 V N-channel MOSFETs in the TO-220 package from ST's STripFET family or from competitors such as Infineon or Vishay — but verify Rds(on), gate charge, and thermal ratings against your design requirements.