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STMicroelectronics STP60NE06-16 — Discrete Semiconductors

STP60NE06-16 N-Channel MOSFET, 60V 60A, 16mOhm, TO-220

MPNSTP60NE06-16
Obsolete

STMicroelectronics STP60NE06-16 N-Channel MOSFET, 60 V Vdss, 60 A continuous drain current, 16 mOhm Rds(on) max @ 30 A / 10 V, 150 W power dissipation, TO-220-3 through-hole package.

$1.3000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP60NE06-16 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation150W (Tc)
Operating temperature175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs160 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6200 pF @ 25 V

Product details

Procurement must rely on independent distribution and surplus inventories for this part.

60 V, 60 A N-channel power switch

It is designed for switching applications in power supplies, DC-DC converters, and motor drives where low conduction loss and through-hole mounting are required.

TO-220 package and thermal considerations

The metal tab provides the drain connection and must be thermally coupled to a heatsink for operation above a few watts. Maximum power dissipation is 150 W at case temperature, derated by junction-to-case thermal resistance. Maximum junction temperature is 175 °C. A gate resistor and zener clamp are recommended if the drive source has ringing or exceeds the absolute maximum.

Frequently asked questions

Is STP60NE06-16 obsolete?

Yes, the STP60NE06-16 is listed with an Obsolete lifecycle status by STMicroelectronics. There is no recorded official replacement order code.

What is the Rds(on) of STP60NE06-16?

The minimum Rds(on) is achieved at 10 V gate drive.