STMicroelectronics STripFET™ III series, STP60N55F3, N-Channel MOSFET, 55 V Vdss, 80 A Id, 8.5 mOhm Rds(on) at 10 V, TO-220-3, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | STripFET™ III |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 8.5mOhm @ 32A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2200 pF @ 25 V |
The 80 A continuous rating is at case temperature 25 °C; real-world current is limited by the 110 W power dissipation ceiling and the thermal resistance of your heatsink. Input capacitance of 2200 pF at 25 V Vds is manageable for most PWM controllers.
For existing BOM lines, procurement must turn to the independent surplus and broker channel.
Yes, STMicroelectronics lists the STP60N55F3 as obsolete. It is no longer manufactured and must be sourced through surplus or broker channels.
STMicroelectronics has not published an official direct replacement for the STP60N55F3. For new designs, consider current STripFET™ F7 or H7 series N-channel MOSFETs in TO-220 with similar 55 V to 60 V Vdss and 80 A current class.