STMicroelectronics STP60N043DM9, N-Channel MOSFET, 600 V Vdss, 43 mOhm Rds(on) @ 28 A, 10 V, 56 A continuous drain current, TO-220-3 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 56A (Tc) |
| Power dissipation | 245W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 43mOhm @ 28A, 10V |
| Gate charge (Qg) (Max) @ vgs | 78.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4675 pF @ 400 V |
Key features include a gate charge of 78.6 nC at 10 V, input capacitance of 4675 pF at 400 V drain-source, and a maximum gate-source voltage of ±30 V.
The drive voltage must be at least 10 V to achieve this specified on-resistance.
Yes, the 600 V drain-source rating, 43 mOhm Rds(on), and 78.6 nC gate charge make it well suited for hard-switched topologies in AC-DC converters, DC-DC converters, and power-factor-correction stages operating from high-voltage rails. The TO-220 package allows straightforward heatsinking for the 245 W power dissipation capability.