Skip to main content
Log in
STMicroelectronics STP5NK52ZD — Discrete Semiconductors

STP5NK52ZD N-Channel MOSFET, 520V 4.4A TO-220, SuperMESH

MPNSTP5NK52ZD
NRND

STMicroelectronics SuperMESH™ N-channel MOSFET, 520 V drain-source, 4.4 A continuous drain, 1.5 Ω Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$2.1400Ref. price · indicative, final on quote
STMicroelectronics STP5NK52ZD datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP5NK52ZD specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage520 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.4A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.5Ohm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs16.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds529 pF @ 25 V

Product details

Primary-side switch for offline flyback converters

The STP5NK52ZD: Its 520 V drain-source breakdown voltage and 4.4 A continuous drain rating suit it for auxiliary supplies, LED drivers, and appliance power stages.

Gate drive and switching loss budget

Total gate charge is 16.9 nC at 10 V.

Maximum gate-source voltage is ±30 V.

NRND — plan a last-time buy or alternate

For a production BOM that already qualifies this MOSFET, the last-time-buy window may be open. For new designs, a pin-compatible SuperMESH replacement with similar voltage and current class should be evaluated.

Frequently asked questions

Is the STP5NK52ZD obsolete?

It is not fully discontinued, but it is no longer recommended for new designs. Existing production BOMs should plan for a last-time-buy or a qualified replacement.

What is the Rds(on) of STP5NK52ZD?

The maximum on-resistance is 1.5 Ω at a drain current of 2.2 A and a gate-source voltage of 10 V. This is the figure to use for conduction-loss calculations in the worst-case thermal design.