STP5NK52ZD

STMicroelectronics

STMicroelectronics SuperMESH™ N-channel MOSFET, 520 V drain-source, 4.4 A continuous drain, 1.5 Ω Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STP5NK52ZD
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Technical specifications

STP5NK52ZD specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage520 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.4A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.5Ohm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs16.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds529 pF @ 25 V

Technical details

STP5NK52ZD
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