STP5NK50Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ series, N-Channel MOSFET, 500 V drain-source, 4.4 A continuous drain, 1.5 Ohm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STP5NK50Z
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Technical specifications

STP5NK50Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.4A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.5Ohm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs28 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds535 pF @ 25 V

Technical details

500 V N-channel in a TO-220 — what it handles

The STP5NK50Z: The 1.5 Ohm maximum Rds(on) at 2.2 A, 10 V gate drive defines the conduction loss for a typical offline flyback primary or a 500 VDC bus switch.

Total gate charge is 28 nC at 10 V, with a ±30 V maximum gate-source rating that leaves headroom for gate-drive overshoot on a 12 V or 15 V rail. Input capacitance Ciss is 535 pF at 25 V drain-source, which together with the gate charge sets the drive current needed for the target switching frequency — a 28 nC gate at 100 kHz draws 2.8 mA average from the driver, well within a standard MOSFET driver's capability.

The TO-220 through-hole package (TO-220-3) allows direct heatsink mounting with a screw or clip — the 70 W maximum power dissipation assumes an infinite heatsink at 25°C case temperature.

STP5NK50Z
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