STMicroelectronics · STripFET™ II Series
STMicroelectronics STripFET™ II series N-channel MOSFET, STP55NF06L, 60V Vdss, 55A continuous drain, 18mOhm max Rds(on) at 10V, TO-220-3 package, -55°C to 175°C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V, 5V |
| Current - continuous drain (Id) @ 25°C | 55A (Tc) |
| Power dissipation | 95W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 1.7V @ 250µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 27.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 37 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1700 pF @ 25 V |
The Rds(on) of 18 mOhm at 27.5 A and 10 V is the number you check first on a failed board — if the original FET ran hot and the replacement has higher on-resistance, the same load current will push the junction past the 95 W dissipation limit.
