STMicroelectronics SuperMESH™ series, N-Channel MOSFET, TO-220-3 Full Pack, 800 V drain-source, 3 A continuous drain, 3.5 Ohm Rds(on) at 1.5 A, 10 V, 22.5 nC gate charge, -55 to 150 °C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 3.5Ohm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 575 pF @ 25 V |
The STP4NK80ZFP is an 800 V, 3 A N-channel MOSFET from ST's SuperMESH™ series, housed in a TO-220FP full-pack.
On-resistance is specified at 3.5 Ohm maximum with 1.5 A drain current and 10 V gate drive. Gate charge is 22.5 nC at 10 V.
No last-time-buy or NRND notification is on record.
Maximum on-resistance is 3.5 Ohm at 1.5 A drain current with 10 V gate drive.
Yes, it is ROHS3 compliant.