800 V N-Channel MOSFET in TO-220
Housed in a through-hole TO-220-3 package with a 80 W power dissipation capability at the case, this part targets designs that need a robust high-voltage switch without the thermal constraints of surface-mount packages.
The STP4NK80Z requires a 10 V gate drive for the specified minimum on-resistance; the gate threshold voltage is 4.5 V maximum at 50 µA drain current, so a standard 12 V gate-drive rail from a PWM controller or driver IC is sufficient. Total gate charge is 22.5 nC at 10 V, which keeps the driver's switching loss manageable in the 50–150 kHz range typical of flyback and forward converters. Input capacitance measures 575 pF at 25 V drain-source, a figure that influences the driver's peak current requirement during turn-on and turn-off transitions.
Temperature rating and environment
The 80 W power dissipation at the case assumes proper heatsinking through the TO-220 tab — in practice, derating follows the thermal resistance curve above 25°C case temperature. The ±30 V maximum gate-source rating provides margin against gate-drive overshoot in noisy switching layouts.