STP4NK60ZFP

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ N-channel MOSFET, 600V Vdss, 4A continuous drain, 2 Ohm Rds(on), TO-220-3 Full Pack (TO-220FP), tube.

STMicroelectronics STP4NK60ZFP
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[IN STOCK] In Stock: 16 pcs
$0.92/ pc

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Technical specifications

STP4NK60ZFP specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds510 pF @ 25 V

Technical details

600 V, 4 A, TO-220FP — the isolated-tab advantage

The STP4NK60ZFP is a 600 V, 4 A N-channel MOSFET from ST's SuperMESH™ series, housed in a TO-220FP full-pack. The fully isolated tab means no thermal pad, mica washer, or bushings are needed when bolting to a grounded heatsink — the package itself provides the isolation, which simplifies assembly and cuts BOM hardware cost.

Active lifecycle and compliance

The 150°C maximum junction temperature is standard for 600 V MOSFETs in this class. Power dissipation is rated 25 W at the case — derate linearly above 25°C case temperature per the datasheet curve.

Peer comparison — STP4NK80ZFP

The closest parametric peer is the STP4NK80ZFP, also in TO-220FP. It raises Vdss to 800 V but drops continuous drain current to 3 A and Rds(on) increases to 3.5 Ohm at 1.5 A. Gate charge is slightly lower at 22.5 nC. For a 600 V bus design the STP4NK60ZFP carries lower conduction loss; the 800 V part only helps where the DC link exceeds 600 V or transient margin is tight.

STP4NK60ZFP
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