Skip to main content
Log in
STMicroelectronics STP4NK60Z — Discrete Semiconductors

STP4NK60Z N-Ch 600V 4A MOSFET, SuperMESH, TO-220-3

MPNSTP4NK60Z
Active

STMicroelectronics SuperMESH N-channel MOSFET, 600 V drain-source, 4 A continuous drain, 2 Ohm Rds(on) at 10 V, TO-220-3 through-hole package, active production.

$1.6600Ref. price · indicative, final on quote
STMicroelectronics STP4NK60Z datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP4NK60Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation70W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds510 pF @ 25 V

Product details

STP4NK60Z N-channel MOSFET, 600 V drain-source, 4 A continuous drain, SuperMESH series.

Gate-source voltage rating is ±30 V; threshold is 4.5 V at 50 µA drain current.

TO-220-3 through-hole package, 70 W power dissipation at Tc=25 °C. Operating junction temperature is 150 °C.

The base product number is STP4NK60; the Z suffix denotes the SuperMESH generation. If you are cross-shopping within the 600 V, 4 A class, the TO-220 footprint is standard, but confirm the gate charge and Rds(on) against your switching frequency and thermal budget.

Frequently asked questions

What is the closest pin-compatible alternative to STP4NK60Z in this component family?

No official pin-compatible alternative or second-source is listed for the STP4NK60Z. Within the same 600 V, 4 A TO-220 class, other vendors offer parts with similar ratings, but gate charge and Rds(on) differ — verify against your switching frequency and thermal budget before substituting.