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STMicroelectronics STP4NK50ZFP — Discrete Semiconductors

STP4NK50ZFP N-Channel MOSFET, 500 V, 3 A, TO-220FP

MPNSTP4NK50ZFP
Obsolete

STMicroelectronics SuperMESH™ N-Channel MOSFET, STP4NK50ZFP, 500 V drain-source, 3 A continuous drain, 2.7 Ohm Rds(on) at 10 V, TO-220-3 Full Pack, through hole.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP4NK50ZFP specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2.7Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds310 pF @ 25 V

Product details

500 V, 3 A, 2.7 Ohm — the power-stage fit check

Its 500 V drain-source breakdown voltage gives the headroom needed for universal-input AC-DC stages, while the 3 A continuous drain current and 2.7 Ohm maximum on-resistance (at 1.5 A, 10 V gate drive) define the conduction loss budget for a given load. The 20 W power dissipation limit (at case temperature) sets the thermal boundary — in a TO-220 Full Pack package, the junction-to-case path is the main thermal constraint, and the fully encapsulated tab means no insulating washer is needed when mounting to a heatsink.

The 4.5 V gate threshold maximum (at 50 µA) means the device is fully enhanced with a standard 10 V gate drive, but it is not a logic-level part — the specified drive voltage for minimum on-resistance is 10 V.

ST lists the STP4NK50ZFP as Obsolete.

Frequently asked questions

Is STP4NK50ZFP obsolete and what is the replacement?

Yes, ST lists the STP4NK50ZFP as Obsolete. No direct replacement is listed in the ST portfolio. For new designs, evaluate current-production 500 V N-channel MOSFETs in TO-220FP with similar Rds(on) and gate charge.