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STMicroelectronics STP4NK50Z — Discrete Semiconductors

STP4NK50Z N-Channel MOSFET, 500 V, 3 A, TO-220

MPNSTP4NK50Z
Obsolete

STMicroelectronics SuperMESH N-Channel MOSFET, STP4NK50Z, 500 V drain-source, 3 A continuous drain current, 2.7 Ohm Rds(on) at 1.5 A, 10 V, 12 nC gate charge, TO-220-3 package, -55°C to 150°C junction temperature.

$0.7700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP4NK50Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2.7Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds310 pF @ 25 V

Product details

500 V, 3 A — the switching envelope

On-resistance and gate drive — conduction vs switching loss

Rds(on) is specified at 2.7 Ohm maximum at 1.5 A drain current and 10 V gate drive. That is a moderate on-resistance for a 500 V device — expect conduction losses around 6 W at 1.5 A, which the 45 W power dissipation rating (at case temperature) can handle with adequate heatsinking. These numbers keep the switching losses low in the 50–150 kHz range; a small gate-drive transformer or a simple driver IC can handle the charge without excessive cross-conduction.

STMicroelectronics lists the STP4NK50Z as obsolete.

Frequently asked questions

Is STP4NK50Z obsolete?

Yes, STMicroelectronics has marked the STP4NK50Z as obsolete.

What is the Vgs threshold of STP4NK50Z?

The maximum gate-source threshold voltage (Vgs(th)) is 4.5 V at a drain current of 50 µA. This means the device requires at least 4.5 V on the gate to begin conducting, and a full 10 V drive is recommended to achieve the specified on-resistance.