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STMicroelectronics STP4NB80 — Discrete Semiconductors

STP4NB80 N-Channel MOSFET, 800 V, 4 A, TO-220-3

MPNSTP4NB80
Obsolete

STMicroelectronics PowerMESH N-Channel MOSFET, STP4NB80, 800 V drain-source voltage, 4 A continuous drain current, 3.3 Ohm Rds(on) at 2 A, 10 V gate drive, TO-220-3 through-hole package.

$1.9300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP4NB80 specifications
ParameterValue
SeriesPowerMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation100W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs3.3Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds920 pF @ 25 V

Product details

The STP4NB80 is an 800 V, 4 A N-channel PowerMESH MOSFET in a TO-220-3 through-hole package. Its 800 V drain-source voltage (Vdss) targets offline flyback converters, PFC stages, and auxiliary power supplies where the bulk rail sits at 400 V or higher. The 4 A continuous drain current is case-limited at 100 W dissipation — real-world current handling depends on heatsink and ambient, but the silicon is sized for several amps in a typical 100 W-class converter. On-resistance is 3.3 Ohm maximum at 2 A with 10 V gate drive. That is high by modern super-junction standards, so conduction losses dominate in continuous operation.

Obsolete — sourcing reality and what replaces it

Because no pin-compatible second source is documented, a cross-reference search should start with ST's own PowerMESH family at the same voltage and current class — the STP4NB80's 800 V / 4 A / TO-220 footprint is a common slot that several active ST parts may fill, but each candidate must be verified against the original design's gate drive and switching loss budget.

Package and thermal — TO-220 mounting notes

The STP4NB80 comes in a standard TO-220-3 through-hole package (supplier device package TO-220). The metal tab is the drain. Mounting requires a heatsink for any continuous current above an amp — the 100 W maximum dissipation is case-referenced, and without a heatsink the junction reaches 150 °C at a fraction of that power. Use a thermal pad or mica insulator with thermal compound, and torque the mounting screw to the usual TO-220 spec.

Frequently asked questions

What is the Vds of STP4NB80?

The drain-to-source voltage (Vdss) is 800 V.

What replaces STP4NB80?

A cross-reference within ST's PowerMESH family at 800 V / 4 A in TO-220 is the starting point, but each candidate must be verified against the original design's gate drive and switching loss budget.