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STMicroelectronics STP4NB100 — Discrete Semiconductors

STP4NB100 N-Channel MOSFET, 1000 V, 3.8 A, TO-220

MPNSTP4NB100
Obsolete

STMicroelectronics STP4NB100, PowerMESH N-Channel MOSFET, 1000 V Vdss, 3.8 A Id, 4.4 Ohm Rds(on) @ 2 A, 10 V, 45 nC Qg, TO-220-3, 150°C junction temperature.

$2.4600Ref. price · indicative, final on quote
STMicroelectronics STP4NB100 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP4NB100 specifications
ParameterValue
SeriesPowerMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.8A (Tc)
Power dissipation125W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs4.4Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 25 V

Product details

The STP4NB100 is a 1000 V N-channel PowerMESH MOSFET from STMicroelectronics in a through-hole TO-220-3 package. Its 1000 V drain-source voltage rating targets offline flyback converters, power-factor-correction stages, and high-voltage DC-DC supplies where the primary-side switch sees rectified mains.

Gate drive and switching considerations

For a 100 kHz flyback, that is about 45 mW — manageable with a standard gate-drive IC.

STMicroelectronics lists the STP4NB100 as Obsolete. For production or repair programs that require this exact part, the supply channel is independent distribution — last-time-buy inventory and surplus stock. If a form-fit-function replacement is acceptable, a parametric search for 1000 V N-channel MOSFETs in TO-220 with similar Rds(on) and gate charge will identify candidates — but no pin-compatible drop-in is documented here.

Frequently asked questions

What is the replacement for STP4NB100?

No official replacement order code is recorded for the STP4NB100. A parametric search for 1000 V N-channel MOSFETs in TO-220 with similar Rds(on) and gate charge is the practical path to a substitute.