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STMicroelectronics STP4N62K3 — Discrete Semiconductors

STP4N62K3 N-Channel MOSFET, 620 V, 3.8 A, TO-220

MPNSTP4N62K3
Obsolete

STMicroelectronics SuperMESH3 N-channel MOSFET, 620 V drain-source, 3.8 A continuous drain current, 1.95 Ohm Rds(on) at 10 V gate drive, TO-220 through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP4N62K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.8A (Tc)
Power dissipation70W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.95Ohm @ 1.9A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 50 V

Product details

Gate drive and switching parasitics

Input capacitance Ciss measures 450 pF at 50 V drain-source. The ±30 V maximum gate-source rating provides margin against gate-drive overshoot.

Thermal budget in a TO-220

Maximum power dissipation is 70 W at case temperature Tc=25 °C, derated to zero at 150 °C junction limit. The TO-220 package with a tab soldered to a heatsink or clamped to a chassis can handle the thermal load of a 60 W flyback stage — the junction-to-case thermal path is the limiting factor, not the silicon.

For BOM lines that still call out this order code, the supply path is through independent distribution and surplus inventory.

Frequently asked questions

What is the replacement for STP4N62K3?

No official replacement part number is listed on the lifecycle record. A functionally equivalent N-channel MOSFET in a TO-220 package with a 620 V or higher drain-source rating, similar Rds(on) around 2 Ohms, and comparable gate charge would be needed. The SuperMESH3 series includes higher-current siblings, but pin compatibility and gate-drive thresholds should be verified against the existing BOM.