STMicroelectronics SuperMESH3™ N-channel MOSFET, 525 V Vdss, 2.5 A continuous drain, 2.6 Ohm Rds(on) at 10 V, 11 nC gate charge, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 525 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.5A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 2.6Ohm @ 1.25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 334 pF @ 100 V |
STP4N52K3 N-channel MOSFET, 525 V Vdss, 2.5 A continuous drain, 2.6 Ohm Rds(on) at 10 V, TO-220-3 package.
Gate charge is 11 nC at 10 V. Input capacitance is 334 pF at 100 V Vds.
Maximum power dissipation is 45 W at case temperature. Junction temperature rating is 150°C.
The maximum on-resistance is 2.6 Ohm at 1.25 A drain current with 10 V gate drive. This is the conduction loss figure used for thermal and efficiency calculations in the switching converter.