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STMicroelectronics STP4N150 — Discrete Semiconductors

STP4N150 PowerMESH N-Ch MOSFET, 1500 V, 4 A, TO-220

MPNSTP4N150
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STMicroelectronics STP4N150, PowerMESH™ N-Channel MOSFET, 1500 V Vdss, 4 A Id, 7 Ohm Rds(on), TO-220-3 through hole, 160 W dissipation.

$6.2200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP4N150 specifications
ParameterValue
SeriesPowerMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation160W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs7Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 25 V

Product details

1500 V N-channel MOSFET for offline power stages

This voltage class targets primary-side switches in off-line flyback and forward converters, PFC boost stages, and high-voltage DC-DC converters where the bus sits at 400 V or higher. The 1500 V rating provides substantial derating margin for 240 VAC input rectified to ~380 V DC, plus the leakage inductance spike. Gate charge is 50 nC at 10 V, which is moderate for this voltage class and keeps the gate drive power manageable in a standard PWM controller. The device is packaged in a TO-220 through-hole case with the supplier device package also listed as TO-220. The metal tab provides a direct thermal path to a heatsink; the 160 W power dissipation rating assumes adequate heatsinking.

Input capacitance (Ciss) is 1300 pF at 25 V drain-source. This is the capacitance the gate driver sees during the Miller plateau. A typical PWM controller with a 1 A peak gate drive will switch this device in the tens of nanoseconds.

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