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STMicroelectronics STP4LN80K5 — Discrete Semiconductors

STP4LN80K5 N-Channel MOSFET, 800 V, 3 A, TO-220

MPNSTP4LN80K5
Active

STMicroelectronics MDmesh™ K5 series, N-Channel MOSFET, 800 Vdss, 3 A continuous drain (Tc), 2.6 Ω Rds(on) at 1 A / 10 V, 3.7 nC gate charge, TO-220-3 through-hole, -55°C to 150°C junction temperature.

$1.4900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP4LN80K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs2.6Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs3.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds122 pF @ 100 V

Product details

800 V N-channel — MDmesh K5 for offline power

The STP4LN80K5 is an 800 V N-channel power MOSFET from STMicroelectronics' MDmesh K5 series, packaged in a through-hole TO-220-3. The 2.6 Ω maximum on-resistance at 1 A / 10 V is specified with a 10 V drive, so a gate-drive rail at that level is required to achieve the rated Rds(on).

With a maximum gate charge of 3.7 nC at 10 V, the STP4LN80K5 is a low-Qg device for its voltage class. This means a small gate-drive transformer or a simple bootstrap circuit can drive it at moderate frequencies (60–100 kHz in typical flyback designs) without excessive cross-conduction loss.

Package and mounting — TO-220 for through-hole assembly

The TO-220-3 through-hole package suits point-of-load and board-edge mounting where a heatsink can be bolted to the metal tab. The through-hole format also simplifies hand-prototype builds and rework, though for high-volume pick-and-place the TO-220 requires a lead-forming step or a separate insertion machine.

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