800 V N-channel — MDmesh K5 for offline power
The STP4LN80K5 is an 800 V N-channel power MOSFET from STMicroelectronics' MDmesh K5 series, packaged in a through-hole TO-220-3. The 2.6 Ω maximum on-resistance at 1 A / 10 V is specified with a 10 V drive, so a gate-drive rail at that level is required to achieve the rated Rds(on).
With a maximum gate charge of 3.7 nC at 10 V, the STP4LN80K5 is a low-Qg device for its voltage class. This means a small gate-drive transformer or a simple bootstrap circuit can drive it at moderate frequencies (60–100 kHz in typical flyback designs) without excessive cross-conduction loss.
Package and mounting — TO-220 for through-hole assembly
The TO-220-3 through-hole package suits point-of-load and board-edge mounting where a heatsink can be bolted to the metal tab. The through-hole format also simplifies hand-prototype builds and rework, though for high-volume pick-and-place the TO-220 requires a lead-forming step or a separate insertion machine.
